CREE CGH40090PP射频功率氮化镓（GaN)晶体管
供应商：深圳市立维创展科技有限公司[查看公司详情]
所在地：广东省深圳市福田区福华路21号福侨大厦18E
价格：面议
经营模式：
联系人：梅先生
产品简介
CREE是世界化合物半导体材料﹑外延﹑芯片﹑封装与LED照明解决方案为一体的制造商和行业者。其高质量的微波晶体管器件应用于通信和军事市场放大器设备中。
主要提供射频微波组件和系统、航空航天用产品、频率转换产品等通讯元器件。
立维创展代理美国CREE厂家的射频微波频率元件，CGH40090PP、CGH40180PP、CGH40120F、CGH40180PP、CGH40120F 订货有优势。
28-V通用宽带芯片
CREE 封装离散晶体管：
CGH40006P CGH40006S CGH40010F CGH40010P CGH40025F CGH40025P CGH40035F CGH40045F CGH40090PP CGH40120F CGH40120P CGH40180PP CGH55015F2 CGH55030F2 CGHV27200-TB CGHV27100-TB CGHV22200-TB CGHV22200F CGHV27200F CGHV22100F CGHV27100F
封装单片微波集成电路
CMPA0060002F CMPA0060025F CMPA2560025F CMPA5585025F
CGH40090PP
90W，RF
Power GaN HEMT
Cree's CGH40090PP is an unmatched,gallium
nitride(GaN)high electron mobility transistor(HEMT),The CGH40090PP, operating
from a 28 volt rail, offers a general purpose, broadband solution to a variety
of RF and microwave applications. GaN HEMTs offer high efficiency, high gain
and wide bandwidth capabilities making the CGH40090PP ideal for linear and
compressed amplifier circuits. The transistor is available in a 4-lead flange
package.
CGH40090PP：
频率范围：0-2.5GHz
工作电压：28V
储存温度：-65℃-150℃
工作温度：-40℃-150℃
电流：60mA
详情请联系:张小姐，0755-83050846/15817297155
